Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n(+)-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical...

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Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Fan, Feng-Hsu, Syu, Zun-Yao, Wu, Chia-Jung, Yang, Zhong-Jie, Huang, Bo-Song, Wang, Guan-Jhong, Lin, Yung-Sen, Chen, Hsiang, Hauer Kao, Chyuan, Lin, Chia-Feng
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group UK 2017
Aiheet:
Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5504019/
https://ncbi.nlm.nih.gov/pubmed/28694493
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05391-0
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