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Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n(+)-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical...
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| Vydáno v: | Sci Rep |
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| Hlavní autoři: | , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5504019/ https://ncbi.nlm.nih.gov/pubmed/28694493 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05391-0 |
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