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InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4929681/ https://ncbi.nlm.nih.gov/pubmed/27363290 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep29138 |
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