Načítá se...
InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, w...
Uloženo v:
| Hlavní autoři: | , , , , |
|---|---|
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2012
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3570386/ https://ncbi.nlm.nih.gov/pubmed/23134721 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-617 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|