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Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core–shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2015
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4648807/ https://ncbi.nlm.nih.gov/pubmed/26577391 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1143-5 |
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