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Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-widt...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5062469/ https://ncbi.nlm.nih.gov/pubmed/27734917 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep35217 |
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