Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Lignende værker

• Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
  af: Hu, Hongpo, et al.
  Udgivet: (2017)
• Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
  af: Lee, Chia-Yu, et al.
  Udgivet: (2014)
• Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
  af: Hu, Hongpo, et al.
  Udgivet: (2019)
• On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
  af: Che, Jiamang, et al.
  Udgivet: (2018)
• Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers
  af: Liu, Chuan-Yang, et al.
  Udgivet: (2019)