Nalaganje...
Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a na...
Shranjeno v:
| izdano v: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2019
|
| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6915436/ https://ncbi.nlm.nih.gov/pubmed/31744248 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9111634 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|