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AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385223/ https://ncbi.nlm.nih.gov/pubmed/25852404 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0802-x |
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