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AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2015
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385223/ https://ncbi.nlm.nih.gov/pubmed/25852404 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0802-x |
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