Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as...

Descrición completa

Gardado en:
Detalles Bibliográficos
Main Authors: Xu, Peiqiang, Jiang, Yang, Chen, Yao, Ma, Ziguang, Wang, Xiaoli, Deng, Zhen, Li, Yan, Jia, Haiqiang, Wang, Wenxin, Chen, Hong
Formato: Artigo
Idioma:Inglês
Publicado: Springer 2012
Assuntos:
Nano Review
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC3299620/
https://ncbi.nlm.nih.gov/pubmed/22348545
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-141
Tags: Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!

Títulos similares