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Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H(2) atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distrib...

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Main Authors: Zhang, Jin, Li, Senlin, Xiong, Hui, Tian, Wu, Li, Yang, Fang, Yanyan, Wu, Zhihao, Dai, Jiangnan, Xu, Jintong, Li, Xiangyang, Chen, Changqing
格式: Artigo
語言:Inglês
出版: Springer 2014
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在線閱讀:https://ncbi.nlm.nih.gov/pmc/articles/PMC4128446/
https://ncbi.nlm.nih.gov/pubmed/25136276
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-341
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