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Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
With an appropriate high anneal temperature under H(2) atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distrib...
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| Main Authors: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4128446/ https://ncbi.nlm.nih.gov/pubmed/25136276 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-341 |
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