Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots
A theoretical study on the effect of a magnetic field or impurities on the carrier states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots and for comparison two systems are considered; InAs embedded in GaAs and GaN in AlN. The electro...
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| 發表在: | Revista Mexicana de Física |
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| Principais autores: | , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Sociedad Mexicana de Física A.C.
2019
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| 主題: | |
| 在線閱讀: | https://www.redalyc.org/articulo.oa?id=57082923003 |
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