Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots
A theoretical study on the effect of a magnetic field or impurities on the carrier states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots and for comparison two systems are considered; InAs embedded in GaAs and GaN in AlN. The electro...
Shranjeno v:
| izdano v: | Revista Mexicana de Física |
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| Principais autores: | , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Sociedad Mexicana de Física A.C.
2019
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| Teme: | |
| Online dostop: | https://www.redalyc.org/articulo.oa?id=57082923003 |
| Oznake: |
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