Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heter...

Celý popis

Uloženo v:
Podrobná bibliografie
Hlavní autoři: Sang, Ling, Zhu, Qin Sheng, Yang, Shao Yan, Liu, Gui Peng, Li, Hui Jie, Wei, Hong Yuan, Jiao, Chun Mei, Liu, Shu Man, Wang, Zhan Guo, Zhou, Xiao Wei, Mao, Wei, Hao, Yue, Shen, Bo
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2014
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4167304/
https://ncbi.nlm.nih.gov/pubmed/25258600
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-470
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky