Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heter...

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Detalles Bibliográficos
Main Authors: Sang, Ling, Zhu, Qin Sheng, Yang, Shao Yan, Liu, Gui Peng, Li, Hui Jie, Wei, Hong Yuan, Jiao, Chun Mei, Liu, Shu Man, Wang, Zhan Guo, Zhou, Xiao Wei, Mao, Wei, Hao, Yue, Shen, Bo
Formato: Artigo
Idioma:Inglês
Publicado: Springer 2014
Assuntos:
Nano Express
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC4167304/
https://ncbi.nlm.nih.gov/pubmed/25258600
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-470
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