Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors

Lignende værker

• Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
  af: Sang, Ling, et al.
  Udgivet: (2014)
• Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
  af: Lv, Yuanjie, et al.
  Udgivet: (2012)
• Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors
  af: Zhao, Sheng-Xun, et al.
  Udgivet: (2016)
• AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
  af: Tzou, An-Jye, et al.
  Udgivet: (2017)
• Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
  af: Li, Liuan, et al.
  Udgivet: (2014)