Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heter...

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Autors principals: Sang, Ling, Zhu, Qin Sheng, Yang, Shao Yan, Liu, Gui Peng, Li, Hui Jie, Wei, Hong Yuan, Jiao, Chun Mei, Liu, Shu Man, Wang, Zhan Guo, Zhou, Xiao Wei, Mao, Wei, Hao, Yue, Shen, Bo
Format: Artigo
Idioma:Inglês
Publicat: Springer 2014
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4167304/
https://ncbi.nlm.nih.gov/pubmed/25258600
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-470
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