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Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H(2) atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distrib...

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Bibliografische gegevens
Hoofdauteurs: Zhang, Jin, Li, Senlin, Xiong, Hui, Tian, Wu, Li, Yang, Fang, Yanyan, Wu, Zhihao, Dai, Jiangnan, Xu, Jintong, Li, Xiangyang, Chen, Changqing
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Springer 2014
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Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4128446/
https://ncbi.nlm.nih.gov/pubmed/25136276
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-341
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