Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H(2) atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distrib...

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Detaylı Bibliyografya
Asıl Yazarlar: Zhang, Jin, Li, Senlin, Xiong, Hui, Tian, Wu, Li, Yang, Fang, Yanyan, Wu, Zhihao, Dai, Jiangnan, Xu, Jintong, Li, Xiangyang, Chen, Changqing
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer 2014
Konular:
Nano Express
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4128446/
https://ncbi.nlm.nih.gov/pubmed/25136276
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-341
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