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Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H(2) atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distrib...

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Bibliografske podrobnosti
Main Authors: Zhang, Jin, Li, Senlin, Xiong, Hui, Tian, Wu, Li, Yang, Fang, Yanyan, Wu, Zhihao, Dai, Jiangnan, Xu, Jintong, Li, Xiangyang, Chen, Changqing
Format: Artigo
Jezik:Inglês
Izdano: Springer 2014
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC4128446/
https://ncbi.nlm.nih.gov/pubmed/25136276
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-341
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