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Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211209/ https://ncbi.nlm.nih.gov/pubmed/21711667 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-158 |
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