A look underneath the SiO(2)/4H-SiC interface after N(2)O thermal treatments

The electrical compensation effect of the nitrogen incorporation at the SiO(2)/4H-SiC (p-type) interface after thermal treatments in ambient N(2)O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-...

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Hlavní autoři: Fiorenza, Patrick, Giannazzo, Filippo, Swanson, Lukas K, Frazzetto, Alessia, Lorenti, Simona, Alessandrino, Mario S, Roccaforte, Fabrizio
Médium: Artigo
Jazyk:Inglês
Vydáno: Beilstein-Institut 2013
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On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3628548/
https://ncbi.nlm.nih.gov/pubmed/23616945
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.4.26
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