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Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2011
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211166/ https://ncbi.nlm.nih.gov/pubmed/21711619 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-120 |
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