Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most...

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Bibliographic Details
Main Authors: Eriksson, Jens, Roccaforte, Fabrizio, Reshanov, Sergey, Leone, Stefano, Giannazzo, Filippo, LoNigro, Raffaella, Fiorenza, Patrick, Raineri, Vito
Format: Artigo
Language:Inglês
Published: Springer 2011
Subjects:
Nano Express
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211166/
https://ncbi.nlm.nih.gov/pubmed/21711619
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-120
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