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Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (T(gr )from 1600 to 2000°C). For all the considered growth temperatures, few layers of...
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| Main Authors: | , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2011
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211332/ https://ncbi.nlm.nih.gov/pubmed/21711803 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-269 |
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