Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic...

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Main Authors: Frazzetto, Alessia, Giannazzo, Filippo, Lo Nigro, Raffaella, Di Franco, Salvatore, Bongiorno, Corrado, Saggio, Mario, Zanetti, Edoardo, Raineri, Vito, Roccaforte, Fabrizio
Formáid: Artigo
Teanga:Inglês
Foilsithe: Springer 2011
Ábhair:
Nano Review
Rochtain Ar Líne:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211209/
https://ncbi.nlm.nih.gov/pubmed/21711667
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-158
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