Cargando...

Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias

This work demonstrates void-free nickel filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled superconformal, void-free deposition. The chemistry, a Watts electrolyte containing a dilute suppressin...

Descrición completa

Gardado en:
Detalles Bibliográficos
Publicado en:ECS Trans
Main Authors: Josell, D., Moffat, T.P.
Formato: Artigo
Idioma:Inglês
Publicado: 2016
Assuntos:
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC5830146/
https://ncbi.nlm.nih.gov/pubmed/29503673
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1149/2.1151607jes
Tags: Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!