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Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias
This work demonstrates void-free cobalt filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and...
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| 出版年: | ECS Trans |
|---|---|
| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5500869/ https://ncbi.nlm.nih.gov/pubmed/28690759 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1149/07502.0025ecst |
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