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Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias

This work demonstrates void-free nickel filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled superconformal, void-free deposition. The chemistry, a Watts electrolyte containing a dilute suppressin...

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Publicat a:ECS Trans
Autors principals: Josell, D., Moffat, T.P.
Format: Artigo
Idioma:Inglês
Publicat: 2016
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5830146/
https://ncbi.nlm.nih.gov/pubmed/29503673
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1149/2.1151607jes
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