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Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias
This work demonstrates void-free nickel filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled superconformal, void-free deposition. The chemistry, a Watts electrolyte containing a dilute suppressin...
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| Publicat a: | ECS Trans |
|---|---|
| Autors principals: | , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5830146/ https://ncbi.nlm.nih.gov/pubmed/29503673 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1149/2.1151607jes |
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