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Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias
This work demonstrates void-free cobalt filling of 56 μm tall, annular Through Silicon Vias (TSVs) using a mechanism that couples suppression breakdown and surface topography to achieve controlled bottom-up deposition. The chemistry, a Watts electrolyte containing a dilute suppressing additive, and...
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| Pubblicato in: | ECS Trans |
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| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
2016
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5500869/ https://ncbi.nlm.nih.gov/pubmed/28690759 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1149/07502.0025ecst |
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