Impact of RRAM Read Fluctuations on the Program-Verify Approach

The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistanc...

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Veröffentlicht in:IEEE Electron Device Lett
Hauptverfasser: Nminibapiel, David M., Veksler, Dmitry, Kim, J.-H., Shrestha, Pragya R., Campbell, Jason P., Ryan, Jason T., Baumgart, Helmut, Cheung, Kin. P.
Format: Artigo
Sprache:Inglês
Veröffentlicht: 2017
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Article
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5590659/
https://ncbi.nlm.nih.gov/pubmed/28890601
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1109/LED.2017.2696002
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