Carregant...
Parasitic engineering for RRAM control
The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing the parasitic capacitance using highly integrated 1T-1R or 1R-1R device...
Guardat en:
| Publicat a: | Solid State Electron |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
2018
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6759863/ https://ncbi.nlm.nih.gov/pubmed/31555017 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|