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Parasitic engineering for RRAM control
The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing the parasitic capacitance using highly integrated 1T-1R or 1R-1R device...
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| Publicado no: | Solid State Electron |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6759863/ https://ncbi.nlm.nih.gov/pubmed/31555017 |
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