Total Ionizing Dose Effects on TiN/Ti/HfO(2)/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance

We observe a gamma-irradiation induced change in electrically detected magnetic resonance (EDMR) in TiN/Ti/HfO(2)/TiN resistive random access memory (RRAM). EDMR measurements exclusively detect electrically active defects which are directly involved in the transport mechanisms within these devices....

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Vydáno v:IEEE Trans Nucl Sci
Hlavní autoři: McCrory, D. J., Lenahan, P. M., Nminibapiel, D. M., Veksler, D., Ryan, J. T., Campbell, J. P.
Médium: Artigo
Jazyk:Inglês
Vydáno: 2018
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6508598/
https://ncbi.nlm.nih.gov/pubmed/31080273
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1109/TNS.2018.2820907
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