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Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
The HfO(2)/TiO(2)/HfO(2) trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trila...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5465003/ https://ncbi.nlm.nih.gov/pubmed/28599512 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2164-z |
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