Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

The HfO(2)/TiO(2)/HfO(2) trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trila...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Zhang, Wei, Kong, Ji-Zhou, Cao, Zheng-Yi, Li, Ai-Dong, Wang, Lai-Guo, Zhu, Lin, Li, Xin, Cao, Yan-Qiang, Wu, Di
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5465003/
https://ncbi.nlm.nih.gov/pubmed/28599512
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2164-z
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars