Φορτώνει......
Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
The HfO(2)/TiO(2)/HfO(2) trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trila...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Nanoscale Res Lett |
|---|---|
| Κύριοι συγγραφείς: | , , , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Springer US
2017
|
| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5465003/ https://ncbi.nlm.nih.gov/pubmed/28599512 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2164-z |
| Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|