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Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device

The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Zhang, Meiyun, Long, Shibing, Li, Yang, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4936978/
https://ncbi.nlm.nih.gov/pubmed/27389343
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1484-8
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