Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device

The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to...

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Bibliografiska uppgifter
I publikationen:Nanoscale Res Lett
Huvudupphovsmän: Zhang, Meiyun, Long, Shibing, Li, Yang, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Materialtyp: Artigo
Språk:Inglês
Publicerad: Springer US 2016
Ämnen:
Nano Express
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC4936978/
https://ncbi.nlm.nih.gov/pubmed/27389343
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1484-8
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