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Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4936978/ https://ncbi.nlm.nih.gov/pubmed/27389343 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1484-8 |
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