טוען...
Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to...
שמור ב:
| הוצא לאור ב: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer US
2016
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4936978/ https://ncbi.nlm.nih.gov/pubmed/27389343 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1484-8 |
| תגים: |
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