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Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO(2)-Based RRAM
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switch...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3796310/ https://ncbi.nlm.nih.gov/pubmed/24121547 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02929 |
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