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Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta(2)O(5)/HfO(2-x)/Hf Stack
In this study, we present a bilayer resistive switching memory device with Pt/Ta(2)O(5)/HfO(2-x)/Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2017
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5311009/ https://ncbi.nlm.nih.gov/pubmed/28228004 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1905-3 |
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