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Self-Compliance and High Performance Pt/HfO(x)/Ti RRAM Achieved through Annealing
A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO(x)/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7153612/ https://ncbi.nlm.nih.gov/pubmed/32143299 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10030457 |
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