APA Citatie

Zhang, W., Kong, J., Cao, Z., Li, A., Wang, L., Zhu, L., . . . Wu, D. (2017). Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition. Nanoscale Res Lett.

Chicago Style citaat

Zhang, Wei, Ji-Zhou Kong, Zheng-Yi Cao, Ai-Dong Li, Lai-Guo Wang, Lin Zhu, Xin Li, Yan-Qiang Cao, en Di Wu. "Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices On Pt and TiN-Coated Substrates Fabricated By Atomic Layer Deposition." Nanoscale Res Lett 2017.

MLA citatie

Zhang, Wei, et al. "Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices On Pt and TiN-Coated Substrates Fabricated By Atomic Layer Deposition." Nanoscale Res Lett 2017.