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Impact of RRAM Read Fluctuations on the Program-Verify Approach
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistanc...
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| Publicado no: | IEEE Electron Device Lett |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5590659/ https://ncbi.nlm.nih.gov/pubmed/28890601 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1109/LED.2017.2696002 |
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