Passivation mechanism of thermal atomic layer-deposited Al(2)O(3) films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al(2)O(3)) acquires high negative fixed charge density (Q(f)) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q(f) can be controlled by varying the annealing tempera...

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Bibliografiska uppgifter
Huvudupphovsmän: Zhao, Yan, Zhou, Chunlan, Zhang, Xiang, Zhang, Peng, Dou, Yanan, Wang, Wenjing, Cao, Xingzhong, Wang, Baoyi, Tang, Yehua, Zhou, Su
Materialtyp: Artigo
Språk:Inglês
Publicerad: Springer 2013
Ämnen:
Nano Express
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC3664088/
https://ncbi.nlm.nih.gov/pubmed/23452508
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-114
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