Passivation mechanism of thermal atomic layer-deposited Al(2)O(3) films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al(2)O(3)) acquires high negative fixed charge density (Q(f)) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q(f) can be controlled by varying the annealing tempera...

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Detalhes bibliográficos
Main Authors: Zhao, Yan, Zhou, Chunlan, Zhang, Xiang, Zhang, Peng, Dou, Yanan, Wang, Wenjing, Cao, Xingzhong, Wang, Baoyi, Tang, Yehua, Zhou, Su
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2013
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3664088/
https://ncbi.nlm.nih.gov/pubmed/23452508
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-114
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