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Oxidation precursor dependence of atomic layer deposited Al(2)O(3) films in a-Si:H(i)/Al(2)O(3) surface passivation stacks
In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al(2)O(3) stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al(...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385324/ https://ncbi.nlm.nih.gov/pubmed/25852428 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0798-2 |
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