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Uniformity and passivation research of Al(2)O(3) film on silicon substrate prepared by plasma-enhanced atom layer deposition
Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen pl...
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| Vydáno v: | Nanoscale Res Lett |
|---|---|
| Hlavní autoři: | , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385297/ https://ncbi.nlm.nih.gov/pubmed/25852420 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0831-5 |
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