טוען...
Passivation mechanism of thermal atomic layer-deposited Al(2)O(3) films on silicon at different annealing temperatures
Thermal atomic layer-deposited (ALD) aluminum oxide (Al(2)O(3)) acquires high negative fixed charge density (Q(f)) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q(f) can be controlled by varying the annealing tempera...
שמור ב:
| Main Authors: | , , , , , , , , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2013
|
| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3664088/ https://ncbi.nlm.nih.gov/pubmed/23452508 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-114 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|