Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO(2)) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, p...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Nanoscale Res Lett
Main Authors: Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Chen, Song-Yan, Huang, Wei, Yang, Chih-Hsiang, Kung, Chung-Yuan, Zhu, Wen-Zhang, Xiong, Fei-Bing, Meng, Xian-Guo
Format: Artigo
Jezik:Inglês
Izdano: Springer US 2017
Teme:
Nano Express
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC5418172/
https://ncbi.nlm.nih.gov/pubmed/28476082
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2098-5
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