Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO(2)) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, p...

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Опубликовано в: :Nanoscale Res Lett
Главные авторы: Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Chen, Song-Yan, Huang, Wei, Yang, Chih-Hsiang, Kung, Chung-Yuan, Zhu, Wen-Zhang, Xiong, Fei-Bing, Meng, Xian-Guo
Формат: Artigo
Язык:Inglês
Опубликовано: Springer US 2017
Предметы:
Nano Express
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC5418172/
https://ncbi.nlm.nih.gov/pubmed/28476082
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2098-5
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