Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO(2)) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, p...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Chen, Song-Yan, Huang, Wei, Yang, Chih-Hsiang, Kung, Chung-Yuan, Zhu, Wen-Zhang, Xiong, Fei-Bing, Meng, Xian-Guo
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2017
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5418172/
https://ncbi.nlm.nih.gov/pubmed/28476082
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2098-5
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