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Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
Hafnium oxide (HfO(2)) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, p...
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| הוצא לאור ב: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer US
2017
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5418172/ https://ncbi.nlm.nih.gov/pubmed/28476082 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2098-5 |
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