Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism

In this work, hafnium oxide (HfO(2)) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO(2) films and HfO(2)/Si interfac...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Zhang, Xiao-Ying, Hsu, Chia-Hsun, Lien, Shui-Yang, Wu, Wan-Yu, Ou, Sin-Liang, Chen, Song-Yan, Huang, Wei, Zhu, Wen-Zhang, Xiong, Fei-Bing, Zhang, Sam
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2019
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6405792/
https://ncbi.nlm.nih.gov/pubmed/30847661
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2915-0
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