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Investigation of Nitridation on the Band Alignment at MoS(2)/HfO(2) Interfaces
The effect of nitridation treatment on the band alignment between few-layer MoS(2) and HfO(2) has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS(2)/HfO(2) with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.3...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6541675/ https://ncbi.nlm.nih.gov/pubmed/31144185 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3020-0 |
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