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Computational Study of MoS(2)/HfO(2) Defective Interfaces for Nanometer-Scale Electronics
[Image: see text] Atomic structures and electronic properties of MoS(2)/HfO(2) defective interfaces are investigated extensively for future field-effect transistor device applications. To mimic the atomic layer deposition growth under ambient conditions, the impact of interfacial oxygen concentratio...
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| Publicado no: | ACS Omega |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2017
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6641027/ https://ncbi.nlm.nih.gov/pubmed/31457620 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.7b00636 |
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