Učitavanje...
Computational Study of MoS(2)/HfO(2) Defective Interfaces for Nanometer-Scale Electronics
[Image: see text] Atomic structures and electronic properties of MoS(2)/HfO(2) defective interfaces are investigated extensively for future field-effect transistor device applications. To mimic the atomic layer deposition growth under ambient conditions, the impact of interfacial oxygen concentratio...
Spremljeno u:
| Izdano u: | ACS Omega |
|---|---|
| Glavni autori: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
American Chemical Society
2017
|
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6641027/ https://ncbi.nlm.nih.gov/pubmed/31457620 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.7b00636 |
| Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|