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Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS(2) and HfO(2) High-k Dielectric
Two-dimensional layered semiconductors such as molybdenum disulfide (MoS(2)) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS(2) channel and gate dielectric is fundamentally import...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5234002/ https://ncbi.nlm.nih.gov/pubmed/28084434 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep40669 |
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