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Atomic layer deposition for fabrication of HfO(2)/Al(2)O(3) thin films with high laser-induced damage thresholds
Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage t...
Tallennettuna:
| Julkaisussa: | Nanoscale Res Lett |
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| Päätekijät: | , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer US
2015
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385131/ https://ncbi.nlm.nih.gov/pubmed/25852341 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0731-8 |
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